| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase the yield while reducing the cost by employing a second element which receives the output from a first element for selecting a pixel and supplies a voltage to a pixel thereby eliminating a driver IC. SOLUTION: An amorphous silicon or polysilicon film is formed by depositing a gate insulation film and a first insulator layer serving as an interlayer insulator and then it is patterned. A silicon nitride film, or the like, is then formed using a mask such that an etching stopper overlaps a select line. Subsequently, an impurity doped semiconductor film is formed and patterned to define a semiconductor region 602 of a first element. Thereafter, a second insulation film is formed, the activated semiconductor film of a second element is patterned to form an etching stopper and an impurity doped semiconductor film is formed and patterned thus defining the semiconductor region 605 of a second element. Furthermore, a voltage supply line 606 is formed of a metallic material followed by formation of the drain and contact of the second element.</p> |
