| 摘要 |
PROBLEM TO BE SOLVED: To obtain a general-purpose positive photoresist composition excellent in characteristics such as resolution, heat resistance, the rate of residum film and sensitivity by using a photosensitive material obtained by mixing specified pts.wt. of specified 1st and 2nd photosensitive compounds, a resin and a solvent. SOLUTION: The photoresist composition has a photosensitive material obtained by mixing 30-70 pts.wt. 1st photosensitive compound of formula I and 70-30 pts.wt. 2nd photosensitive compound of formula II or III, a resin and a solvent. In the formulae, R1-R5 are each H, 1,2-naphthoquinonediazido-4- sulfonyl, 1,2-naphthoquinonediazido-5-sulfonyl or 1,2-naphthoquinonediazido-6- sulfonyl, R1-R5 are not simultaneously H, n1 and n2 are each 0, 1, 2 or 3, n1 and n2 are not simultaneously O, X1a-X1d and X2a-X2c are each H or alkyl and n3 is 1 or 2. |
