| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron crystal or positive-hole crystal that reduces damage, improves quality and uniformity, allows electrons to be arranged accurately one by one at each dot by accelerating and fixing the formation of the electron crystal or the positive-hole crystal by artificially formed potential modulation. SOLUTION: An ohmic contact electrode 16 is formed from the upper portion of a wafer, and a positive voltage is applied between the ohmic contact electrode and a back gate electrode 17, thus accumulating electrons that have lost the freedom of movement being confined in a vertical direction on a hetero interface layer. Since the hetero structure is non-doped, a two-dimensional electron 15 with high mobility can be formed in the wafer, and electron density can be freely controlled by a back gate voltage. A circular dot 19 is left so that it forms a triangular lattice at a period of 70 nm between ohmic electrodes 16a and 16b on the surface of the wafer, and fine machining for etching so that the periphery can be made shallow is made by electron beam exposure, thus forming weak potential modulation with a period of 70 nm on the hetero interface. |
