TRANSISTOR FOR PROTECTING STATIC ELECTRICITY AND MANUFACTURING MEHTOD THEREOF

摘要

PURPOSE: A transistor for protecting static electricity is provided to reduce the area in which a silicide layer is formed and increase a resistance by forming a trench between a gate and a drain contact. CONSTITUTION: A first region in which an interior circuit is formed and a second region in which an ESD circuit for protecting the interior circuit from an ESD are formed in a semiconductor substrate(31). A first and a second gate electrodes(38,39) are formed on the substrate of the first and the second regions. A trench(35) is formed on the semiconductor substrate(30) on one side of the second gate electrode(39). An insulating layer completely fills the trench(35). A first source/drain region(44) is formed on the surface of the semiconductor substrate of both sides of the first gate electrode(38). A second source region is formed on one side of the second gate electrode(39), and a second drain region is separated by an insulating layer. A silicide layer(46) is formed on the surfaces of the first and the second source/drain regions.