| 摘要 |
PROBLEM TO BE SOLVED: To realize a CCD solid-state image pickup element, which is of vertical overflow drain type and sensitive in a near-infrared region, where pixels are more lessened in size without deteriorating image pickup element in characteristics, a leakage current is prevented from generating at a scribe line, and a protective transistor is prevented from deteriorating in protective capacity. SOLUTION: A second conductivity overflow barrier region 34 is provided in a region, corresponding to the pixel region of a first conductivity semiconductor substrate 40, a second conductivity region 35A is provided in a high- resistance epitaxial layer 35 formed on the semiconductor substrate 40, through the intermediary of an overflow barrier region 34 corresponding to the overflow barrier region 34, and a first conductivity peripheral region 35B of the epitaxial layer 35 is formed.
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