| 摘要 |
PURPOSE: A manufacturing method of a shadow mask is provided to be capable of enhancing resolution by forming accurate shadow mask patterns through etching of a Si-substrate. CONSTITUTION: In manufacturing method of the shadow mask for pixelation of an EL(Electroluminescence) device including a plurality of pixels consisting a first electrode, an organic EL layer and a second electrode, a plurality of etch stop layers are first formed on both sides of a Si-substrate(110) with constant gaps. Then, the Si-substrate is dipped into etchant liquid and then is heated by a predetermined to be etched. In addition, the Si-substrate may be etched. Further, the etch stop layers are formed by patterning through a photolithography process after coating silicon nitride with a predetermined thickness using CVD or sputtering.
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