发明名称 ELECTRON BEAM DIRECT PATTERNING METHOD
摘要 PROBLEM TO BE SOLVED: To form a uniform thin film and to form an ultrafine pattern nearly independent of process conditions such as PEB temperature. SOLUTION: A surfactant 1 is mixed with apolar molecules 4 and formed into a film and a part of the film is charged up by irradiation with electron beams 5 to disturb the regular arrangement of the film. The charged-up part is made soluble in a solvent and patterning is carried out. Since a built-up film of molecules is used, a thin film free from defects due to mist and uniform in film thickness is obtained and a very fine pattern can be formed. Since electron charge-up is utilized, the pattern can be resolved even with microcolumn multi-beams from which beams at high acceleration voltage cannot be obtained or with entirely general patterning beams utilizing photoelectric effect.
申请公布号 JP2000298343(A) 申请公布日期 2000.10.24
申请号 JP19990106507 申请日期 1999.04.14
申请人 NEC CORP 发明人 YAMADA YASUHISA
分类号 G03F7/039;G03C1/00 主分类号 G03F7/039
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