RESIST PATTERN DEVELOPER, RESIST PATTERN FORMING METHOD, AND PHOTOMASK PRODUCED USING THOSE

摘要

PROBLEM TO BE SOLVED: To obtain a resist pattern developer capable of suppressing swelling in development particularly in the case of using a halogenated alkylstyrene-base resist. SOLUTION: The developer is a mixture of a good solvent to a halogenated alkylstyrene-base resist resin used and a bad solvent to the resin. The good solvent has 8 to <11 (cal/cm3)1/2 solubility parameter and the bad solvent has <8 or >=11(cal/cm4)1/2 solubility parameter.