| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor crystal growth method by which a compound semiconductor single crystal having good crystal properties can be produced with good reproducibility by using a sublimation process. SOLUTION: This method comprises: a preparation stage for preparing a growth vessel having a sublimation chamber in which a compound semiconductor source crystal is placed, a growth chamber which is provided at the bottom with a heat sink and in which a seed single crystal is placed on the bottom, and a communication section for connecting the sublimation chamber and the growth chamber to each other; a heat treatment stage for heating the growth vessel in such a way that the temperature of the source crystal and the temperature of the seed crystal are equal to each other, to subject each of the source crystal and the seed crystal to heat treatment under its saturated vapor pressure; and a growth stage for heating the source crystal to a temperature higher than the temperature of the seed crystal, to form a temperature gradient between them and to grow a compound semiconductor single crystal on the seed crystal. Thus, the objective compound semiconductor crystal can be grown by using the method.
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