METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER

摘要

PURPOSE: A method for manufacturing a semiconductor wafer is provided to improve the flatness on the back surface of the wafer by polishing the back surface of the etched wafer in order to have confidence in contamination of a total wafer and improve the productivity. CONSTITUTION: First of all, a wafer sliced with a certain thickness of 0.5 ¯ 0. 8 mm is polished keeping its diameter with 200 ¯ 300 mm. To improve the flatness and get over the damage on the surface, the wafer is supposed to be grinded with a slurry including abrasives. And then, the surface is grinded with finer abrasives one more time. Because fine cracks remain on the surface, the wafer is etched with chemical mixture solution and is heated at 700°C. To get a very flat surface of the wafer, both the front and back surfaces are grinded with abrasives which are much finer than the above under the condition on which pressure, heat and grinding temperature are precisely controlled. And then, the wafer is cleaned to remove the remained abrasives and the chemical solution on the surfaces. Consequently, as flatness of the back surface is improved, the contamination on the back surface is reduced and the productivity is improved.