| 摘要 |
PURPOSE: A capacitor of a semiconductor device using a high-permittivity dielectric layer and a fabrication method thereof are provided to improve process margin and contact stability. CONSTITUTION: A doped layer(11) is formed near a surface of a semiconductor substrate(10), and an interlayer dielectric(12) is formed on the substrate(10). The interlayer dielectric(12) has a contact hole(13) reaching the doped layer(11) and filled with conductive material. Then, a first oxide layer(14), a nitride layer(15) and a second oxide layer(17) are successively formed on the interlayer dielectric(12), exposing the contact hole(13). A diffusion barrier(19) is next formed on overall exposed surfaces, and a lower electrode(20b) is formed thereon. After the diffusion barrier(19) and the lower electrode(20b) above the second oxide layer(17) are removed, a high-permittivity dielectric layer(21) is formed on the lower electrode(20b), the diffusion barrier(19) and the second oxide layer(17). Finally, an upper electrode(22) is formed on the high-permittivity dielectric layer(21).
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