| 摘要 |
A process for treating NF3 useful as a dry etching gas and cleaning gas in processes for producing LSI, TFT, and solar cell and in an electron photographic processes. The treating process comprises following step: (a) preparing a reactor including agitator blades for agitating gas in the reactor and generating a flow of the gas, and a gas flow guide tube for efficiently circulating and dispersing the gas flow generated by the agitator blades in a space of the reactor; (b) stationarily placing at least one substance selected from the group consisting of a metal and a metal compound within a reactor, the metal being at least one metal selected from the group consisting of Si, B, W, Mo, V, Se, Te and Ge, the metal compound being at least one metal compound selected from the group consisting of solid compounds of Si, B, W, Mo, V, Se, Te and Ge; (c) introducing a gas containing NF3 into the reactor to react the introduced gas with at least one substance of the metal and the metal compound at a temperature ranging from 400 to 900 DEG C upon operating the agitator blades of the reactor so as to form a fluoride gas; and (d) capturing the fluoride gas. <IMAGE> |
