| 摘要 |
There is provided a dynamic type semiconductor memory device including (a) a first hierarchized complementary bit line, (b) a second hierarchized complementary bit line, (c) a first sense-amplifier electrically connected to the first bit line, (d) at least one second sense-amplifier electrically connected to both the first bit line and the second bit line, (e) a capacitor located between the first and second bit lines for each of second sense-amplifiers, and (f) a transfer gate arranged in series with the capacity between the first and second bit lines. The above-mentioned dynamic type semiconductor memory device makes it possible to store two-bit data in a single memory cell by employing a memory cell comprised of one transistor and one capacitor, without the use of a conventional memory cell having two transistors and one capacitor. Hence, the dynamic type semiconductor memory device ensures a significant reduction in a chip area.
|
