| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element manufacturing method by which the p-type layer of a semiconductor light emitting element, in which a gallium nitride compound semiconductor is stacked, can be surely activated at a low temperature. SOLUTION: At the activation of a p-type layer 5 of a gallium nitride compound semiconductor layer laminated upon a substrate 1 contains at least an n-type layer 3 and a p-type layer 5, and forms a light emitting layer, the layer 5 is activated by drawing out H atoms contained in the p-type layer 5 by having it irradiated with an oxidizing gas after the layer 5 is grown or by exposing the substrate 1 carrying the grown layer 5 to an oxygen plasma atmosphere in one of processes, after the layer 5 is grown. |
