| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease the number of masks used in a photolithographic process and to decrease the production cost by forming a semiconductor film which is interposed between two element separation holes and which is electrically separated from other pixel regions to constitute a operational semiconductor film. SOLUTION: The region defined by a data bus line 1 and a gate bus line 3 is a pixel region. The drain electrode 15 of a TFT is formed as lead from the data bus line 1 so that the end of the electrode 15 is positioned on one side edge of a channel protective film 47. The channel protective film 47 is defined and electrically separated from other regions by two element separation holes 25, 27 formed on the gate bus line 3 to interpose the drain electrode 15. A source electrode 17 is formed on the other side edge of the channel protective film 47 to face the drain electrode 15. A gate insulating film is formed on the gate bus line 3, and the operational semiconductor layer which constitutes the channel is formed between the gate insulating film and the channel protective film 47 as the upper layer.</p> |
