| 摘要 |
A semiconductor memory device with a redundancy circuit includes a reference section, a fuse section and a latch section. The reference section includes a reference resistance and supplies a first current to the reference resistance. The fuse section includes a fuse and supplies a second current to the fuse. The second current is proportional to the first current. The latch section has a threshold and latches a fuse state data based on the threshold and a voltage drop across the fuse. The fuse state data indicates whether or not the fuse is cut.
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