| 摘要 |
microelectronics, in particular, production of integral circuits and digital semiconductor instruments. SUBSTANCE: device may be used for etching and deposition of materials and development of dielectric on semiconductors and metals. Device has microwave generator, which is connected through trunk rectangular waveguide to waveguide plasma ion source, which uses H10 mode and comprises rectangular waveguide and dielectric discharge tube, which is located in perpendicular to wider wall of said waveguide and is passed through its center, as well as working chamber, which is connected to it. In addition device has second similar plasma ion source, which one end is connected through its rectangular waveguide to trunk rectangular waveguide and first plasma ion source by means of E- joint and waveguide turns. Opposite ends of rectangular waveguides of both plasma ion sources are connected by means of additional waveguide turns. Dielectric discharge tubes of plasma ion sources are located coaxially in round waveguides. Said round waveguides and dielectric discharge tubes are connected to vacuum working chamber, which is located between them. This design results in possibility use both incident wave and reflected wave and to process both sides of a plate. EFFECT: increased efficiency of microwave power usage. 1 dwg |
