METHOD FOR FABRICATING MOSFET OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a field effect transistor is to remove the short channel effect and at the same time to form a source and drain junction having a high concentration impurity. CONSTITUTION: A field oxide layer(20) is formed on a semiconductor substrate(10). A pad oxide layer is formed on the entire structure to prevent the semiconductor substrate from being stressed in an ion implantation process. A n+ ion implantation region(70) is formed by implanting nitrogen ions into the semiconductor substrate to be provided with a channel region and a source/drain region. After removing the pad oxide layer, a gate oxide layer(40) and a gate electrode polysilicon layer are formed on the entire structure. A gate electrode(50) is formed by an etching process using a gate electrode mask. A source region(80) and a drain region(90) having an LDD(lightly doped drain) structure are formed by implanting conductive impurity ions which are the opposite of the nitrogen into the semiconductor substrate.