发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
In a CMOS circuit, impurity regions are formed in the channel forming region of each of an n-channel and p-channel transistors along the channel direction. The intervals between the impurity regions in the n-channel transistor is set narrower than those between the impurity regions in the p-channel transistor so as to make the absolute values of the threshold voltages of the n-channel and p-channel transistors approximately equal to each other. Where active layers are formed by utilizing a crystal structural body that is a collection of needle-like or columnar crystals, the same effect can be attained by controlling the width of the needle-like or columnar crystals.
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申请公布号 |
US6118148(A) |
申请公布日期 |
2000.09.12 |
申请号 |
US19970963977 |
申请日期 |
1997.11.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L27/092;H01L27/12;H01L29/04;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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