| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device which can achieve sure and high speed operation with low power consumption and comparatively easy control. SOLUTION: This ferroelectric memory device can transfer the voltage of a bit line bar 28 amplified by a sense amplifier 30 to a plate line 35 by connecting a plate line 35 and the bit line bar 28 with a NMOS transistor 54 (switch means). Therefore, as a current for driving the plate line 35 is made to flow only when the voltage of the bit line bar 28 is different from the voltage of the plate line 35, a driving current can be reduced as compared with a conventional method tn which the cell plate line 35 is driven for each access. Also, as the plate line 35 can be driven by the sense amplifier 30, a plate line driving circuit is not required.
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