METHOD OF FABRICATION SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process when performing a selective silicidation for a semiconductor device. CONSTITUTION: A gate electrode(106) is formed on a semiconductor substrate(100). A silicide blocking layer(112) is formed on a whole face of the semiconductor substrate(100). A photoresist pattern is formed on the remaining region except for a region for forming the first transistor. The silicide blocking layer(112) is removed. A source/drain region is formed by implanting the first conductive dopant. The photoresist pattern is removed. The photoresist pattern is formed on the remaining region except for a region for forming the second transistor on a logic formation portion. The silicide blocking layer(112) is formed from the second transistor formation region. A source/drain region is formed by implanting the second conductive dopant. The photoresist pattern is removed. A silicide layer(116) is formed on the source/drain region of the logic formation portion.