Method of forming polycrystalline silicon TFTs with TiN/Cu/TiN interconnections for a liquid crystal display pixel array

摘要

The invention provides a TFT LCD structure and method for using copper conductors on polycrystalline silicon TFTs. A top gate TFT architecture is employed with the copper sandwiched between layers of TiN. Conventional photolithographic and wet etch patterning is used for the copper and TiN conductors. Copper metal gates and source/drain electrodes are provided, yielding TFTs of a quality comparable to TFTs employing aluminum electrodes and conductors. A method of fabrication is also disclosed.