发明名称 |
Modulation-doped field-effect transistors and fabrication processes |
摘要 |
A process is provided for fabricating MODFET's in group III nitride compound semiconductors. The process precedes isolation of the MODFET structure with the use of e-beam lithography to define very narrow (e.g., DIFFERENCE 0.25 micrometer) gates which enhance transistor microwave cut-off frequency. Because these compound semiconductors resist chemical etchants, isolation is accomplished by etching with reactive ions to form an isolation mesa having a vertical mesa sidewall. To improve breakdown, the mesa sidewall is covered with a passivation layer prior to deposition of a gate feed that contacts the gate. To reduce parasitic gate capacitance, the gate feed is spaced from a narrow edge of the transistor's two-dimensional electron gas.
|
申请公布号 |
US6100548(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980168270 |
申请日期 |
1998.10.07 |
申请人 |
HUGHES ELECTRONICS CORPORATION |
发明人 |
NGUYEN, CHANH N.;NGUYEN, NGUYEN XUAN;LE, MINH V. |
分类号 |
H01L21/285;H01L21/3213;H01L21/335;H01L21/76;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
H01L21/285 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|