发明名称 METHOD FOR MANUFACTURING BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASER DIODE
摘要 PURPOSE: A method for manufacturing a buried heterostructure distributed feedback laser diode is provided to eliminate the need to grow an epitaxial layer on a diffraction grating by joining a first structure composed of the diffraction grating on a substrate to a second structure composed of epitaxial layers stacked on a flat substrate. CONSTITUTION: A method for manufacturing a buried heterostructure distributed feedback laser diode comprises three steps. The first step is to make a first structure by forming a diffraction grating having a constant height on an n-type substrate. The second step is to make a second structure by sequentially stacking a p-type cap layer, a undoped optical waveguide layer, an activation layer and an n-type optical waveguide layer on a p-type substrate. The third step is to join the first and second structures so that the diffraction grating on the n-type substrate and the undoped optical waveguide layer on the p-type substrate can be joined.
申请公布号 KR20000050846(A) 申请公布日期 2000.08.05
申请号 KR19990000974 申请日期 1999.01.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, NAM HEON
分类号 H01L29/861;H01S5/30;(IPC1-7):H01L33/00;H01S3/19 主分类号 H01L29/861
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