发明名称 |
METHOD FOR MANUFACTURING BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASER DIODE |
摘要 |
PURPOSE: A method for manufacturing a buried heterostructure distributed feedback laser diode is provided to eliminate the need to grow an epitaxial layer on a diffraction grating by joining a first structure composed of the diffraction grating on a substrate to a second structure composed of epitaxial layers stacked on a flat substrate. CONSTITUTION: A method for manufacturing a buried heterostructure distributed feedback laser diode comprises three steps. The first step is to make a first structure by forming a diffraction grating having a constant height on an n-type substrate. The second step is to make a second structure by sequentially stacking a p-type cap layer, a undoped optical waveguide layer, an activation layer and an n-type optical waveguide layer on a p-type substrate. The third step is to join the first and second structures so that the diffraction grating on the n-type substrate and the undoped optical waveguide layer on the p-type substrate can be joined.
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申请公布号 |
KR20000050846(A) |
申请公布日期 |
2000.08.05 |
申请号 |
KR19990000974 |
申请日期 |
1999.01.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, NAM HEON |
分类号 |
H01L29/861;H01S5/30;(IPC1-7):H01L33/00;H01S3/19 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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