| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to maximize an efficiency of forming a micro pattern by forming a silylation layer selectively. CONSTITUTION: A lower limb film(33) to be patterned on a substrate(31) is formed thickly. The substrate includes an impurity region and a bottom conductive layer, and the thick lower limb film is an insulation film or a conductive film. The first photoresist of positive type is coated on the thick lower limb film, and the first photoresist pattern is formed by exposing and developing it to reveal a part of the lower limb film. Then, a trench is formed by etching the lower limb film using the first photoresist pattern as a mask, and the remained first photoresist is removed. Then, the second photoresist(37) is coated to cover the trench on the lower limb film, and is etched back so that the second photoresist remains only in the trench. Then, a silylation layer(39) is formed on a surface of the second photoresist remaining in the trench by performing a silylation process. Then, a pattern revealing a part of the substrate is formed by dry-etching a revealed part where the trench of the lower limb film is not formed using the silylation layer as a mask.
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