| 摘要 |
An insulated gate bipolar transistor having a low on-voltage and a low turn-off time is provided. P-type anode layer having a low impurity concentration, preferably 1x1016 to 1x101 7/cm3, is provided on an N-type drain layer that includes a pair of P-type base regions each having an N+-type source region. A plurality of P+-type anode regions are formed in the P-type anode layer.
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