METHOD FOR FORMING MICRO LINE WIDTH OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a micro line width of a semiconductor device is provided, which is appropriate for forming a micro pattern of a polysilicon. CONSTITUTION: After forming a gate oxide(12) on a silicon substrate(11) by a thermal oxidation, a polysilicon or a WSi2/polysilicon layer(13) is deposited and then a CVD oxide(14) is deposited. The thickness of the CVD oxide is at least above 1000 angstrom. A photoresist(PR) is coated and a PR pattern(15') is formed by exposing and developing the photoresist. The first CVD oxide pattern is formed by dry-etching the CVD oxide using the PR pattern as a mask, and then the photoresist is removed and plasma is removed, and is cleaned using NH4OH:H2O2:H2O(40 deg.C) to scale down the first CVD oxide pattern. Then, a micro line width can be obtained by etching the polysilicon layer by a dry etching apparatus using the second CVD oxide pattern as a mask.