STORAGE CELL ARRANGEMENT IN WHICH VERTICAL MOS TRANSISTORS HAVE AT LEAST THREE DIFFERENT THRESHOLD VOLTAGES DEPENDING ON STORED DATA, AND METHOD OF PRODUCING SAID ARRANGEMENT
摘要
申请公布号
EP0896735(B1)
申请公布日期
2000.07.26
申请号
EP19970924861
申请日期
1997.04.09
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
HOFMANN, FRANZ;KRAUTSCHNEIDER, WOLFGANG;WILLER, JOSEF
