| 摘要 |
PURPOSE: A positive photoresist composition is provided for reducing the variation of critical linewidth dimensions resulting from photoresist film thickness changes, known as linewidth swing ratio, and reducing reflective notching. CONSTITUTION: A positive photoresist composition comprises an admixture of a film-forming resin, a photoactive compound, a solvent and a dye comprising the structure of formula 1, where R1-R3 are independently H, (C1-C10)alkyl, (C1-C10)alkoxy, nitro, halide, cyano, aryl, alkylaryl, alkenyl, dicyanovinyl, SO2CF3, COOZ, SO3Z, COZ, OZ, NZ2, SZ, SO2Z, NHCOZ or SO2NZ2, where Z is H or (C1 -C10)alkyl, Y is a conjugated moiety e.g. N.dbd.N, CW.dbd.CW, CW.dbd.N, or N.dbd.CW, where W is H, (C1-C10)alkyl or (C1-C10)alkoxy, and m=1-5.
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