| 摘要 |
PURPOSE: A semiconductor memory device is provided to prevent bit lines from being multi-selected in changing the bit lines for preventing electric characteristic from being damaged by the multi-selection of the bit lines. CONSTITUTION: A semiconductor memory device is formed by a memory cell array using WL(word line) and BL(bit line). Herein, memory cells are corresponding to column and row in the WL and the BL. The device inputs row/column address signals for regulating the memory cell to read/write data in synchronizing with an external clock signal(CLK). Moreover, column selecting transistors(T) are connected between the BL and DB(data line). When a column address signal is fed from outside, the column selecting transistors are in nonconductive state for a set period. Thus, multiple signals activating the column selecting transistors are not activated at the same time, even if the speeds of the column address signals are different. And, the BL are electrically separated from the DB for the set period. Therefore, the BL are not multi-selected by the change in the column address signals.
|
