发明名称 PROTECTION OF INTEGRATED CIRCUIT HAVING VOLTAGE VARIABLE MATERIAL
摘要 PROBLEM TO BE SOLVED: To protect a voltage variable integrated circuit against transient of EOS(electrical overstress) by providing a voltage variable material layer on an integrated circuit die while filling the gap between a plurality of I/0 pads and a conductive guard rail. SOLUTION: An integrated circuit is provided, on the surface of a die 10, with a plurality of conductive I/0 pads 25 connected electrically with a functional die area 20. A conductive guard rail 30 is provided contiguously to the I/0 pads 25 on the die 10 and a metal trace is provided. A gap 25a is formed between the guard rail 30 and each I/0 pad 25 and filled with a voltage variable material 35. According to the arrangement, the integrated circuit can be protected against extremely high energy associated with EOS transient.
申请公布号 JP2000200869(A) 申请公布日期 2000.07.18
申请号 JP19990348718 申请日期 1999.12.08
申请人 LITTELFUSE INC 发明人 WHITNEY STEPHEN J
分类号 H01L23/58;H01C7/10;H01C7/12;H01L23/31;H01L23/62 主分类号 H01L23/58
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