| 摘要 |
PURPOSE: A method for forming metal wirings of a semiconductor device is provided to prevent a bridge between adjacent wirings and to reduce a fabrication cost. CONSTITUTION: After an insulating layer(31) is formed on a semiconductor substrate(30), a first photoresist pattern(32) for defining a contact hole and a second photoresist pattern(33) for defining a metal wiring are successively formed on the insulating layer(31). Therefore, the insulating layer(31) is partly exposed through a T-shaped hole made by the both patterns(32,33). Next, an etching process is performed by using the both photoresist patterns(32,33) as an etch mask until the substrate(30) is exposed. Then the first photoresist pattern(32) as well as the insulating layer(31) are gradually etched. In the end, the insulating layer(31) is etched into T-shape, that is, the T-shape of the patterns(32,33) is transferred into the insulating layer(31). Next, the both photoresist patterns(32,33) are removed, and a metal layer for the metal wiring is deposited onto the insulating layer(31) while filling the T-shaped contact hole. Finally, the metal layer is etched until the insulating layer(31) is exposed.
|
