METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided which can prevent the generation of void in a titanium silicide film, in fabricating a gate electrode including the titanium silicide film. CONSTITUTION: A method for forming a gate electrode(100) includes the steps of: depositing a gate oxide(12), a polysilicon film(13) and a titanium silicide film(15) on a semiconductor substrate(11) in sequence; densifying the titanium silicide film; crystallizing the titanium silicide film; depositing a passivation film(16) on top of the titanium silicide film; and forming a gate electrode, by patterning the passivation film, the titanium silicide film, the polysilicon film and the gate oxide in a desired shape. The titanium silicide film is densified by thermal processing for 30 minutes or 5 hours in a temperature ranging from 500°C to 650°C in a furnace, or by thermal processing for 10 - 120 seconds in a temperature ranging from 500°C to 650°C in a rapid thermal annealing facility. And it is desirable that the titanium silicide is crystallized in a rapid thermal annealing facility for 10 - 60 seconds in a temperature ranging from 750°C to 950°C.