| 摘要 |
PURPOSE: A method for forming a shallow trench isolation of a semiconductor device is provided which can suppress the over-polishing phenomenon or the phenomenon that a trench-burying oxide is remained during a planarization process. CONSTITUTION: A method for forming a shallow trench isolation suppresses the over-polishing and the remaining of a trench-burying oxide(25) during a planarization process, by performing the planarization process after removing the trench-burying oxide on a top of a wide active region using a reverse mask(26). The method includes the steps of: defining a number of wide and narrow active regions and field regions, and forming an etching resistant pattern(22,23) on a semiconductor substrate(21); forming a number of wide and narrow trenches by etching the semiconductor substrate with an etching process using the etching resistant pattern; forming the trench-burying oxide on a top of the whole structure including the trenches; forming a trench-burying oxide pattern on the active region, by removing a part of the trench-burying oxide on the wide active region; and removing the etching resistant pattern, after remaining the trench-burying oxide in the trench by polishing the trench-burying oxide.
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