发明名称 INTER-LAYER INSULATING FILM OF SEMICONDUCTOR DEVICE AND/ OR SURFACE PROTECTIVE FILM COMPOSITION AND THE SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an inter-layer insulating film of a semiconductor device and/or surface protective film composite, wherein a coat of good film condition while being superior in heat-resistance with low dielectric and low hygroscopicity is formed, and to provide a semiconductor device which is superior in moisture- resistance reliability of, the coat is formed as an inter-layer insulating film and/or surface protective film. SOLUTION: A polyquinoline resin or polyquinoxaline resin, and a solvent whose essential component is a compound such as indicated by a formula (where R is alkyl group of carbon numbers at least 2, vinyl group, cyclohexyl group, or phenyl group) are comprised. A coat comprising the polyquinoline resin or polyquinoxaline resin formed with the composition is provided as an inter- layer insulating film and/or surface protective film of the wiring layer on a semiconductor substrate.
申请公布号 JP2000195854(A) 申请公布日期 2000.07.14
申请号 JP19980370184 申请日期 1998.12.25
申请人 HITACHI CHEM CO LTD 发明人 ABE KOICHI;UEJIMA KOICHI;TAKAYASU REIKO
分类号 H01L21/312;C08K5/3415;C08L65/00;C08L71/12;(IPC1-7):H01L21/312;C08K5/341 主分类号 H01L21/312
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