发明名称 |
LEWIS BASE ADDUCTS OF ANHYDROUS MONONUCLEAR TRIS(BETA-DIKETONATE) BISMUTH COMPOSITIONS FOR DEPOSITION OF BISMUTH-CONTAINING FILMS, AND METHOD OF MAKING THE SAME |
摘要 |
Anhydrous mononuclear Lewis base adducted tris( beta -diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris( beta -diketonato) bismuth complexes of the prior art.
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申请公布号 |
WO0040588(A1) |
申请公布日期 |
2000.07.13 |
申请号 |
WO1999US23034 |
申请日期 |
1999.10.04 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
BAUM, THOMAS;DUBOIS, RAYMOND, H. |
分类号 |
C07C49/92;C07F9/94;C23C16/18;C23C16/40;H01L21/316;(IPC1-7):C07F9/94 |
主分类号 |
C07C49/92 |
代理机构 |
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代理人 |
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地址 |
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