发明名称 |
INTEGRATED CIRCUIT INCLUDING SELF-ARRANGED HYDROGEN BARRIER LAYER AND METHOD FOR PRODUCING THEREOF |
摘要 |
PURPOSE: An integrated circuit including self-arranged hydrogen barrier layer and a method for producing thereof to provide a hydrogen barrier layer covering a material thin layer. CONSTITUTION: An integrated circuit including self-arranged hydrogen barrier layer and a method for producing thereof include a first to a third step. The integrated circuit include an integrated circuit part with a thin membrane(124) composed of metal oxidation material. At the first step, a barrier layer(128) is formed on the thin membrane(124). At the second step, a hydrogen barrier layer(130) is formed on the barrier layer(128). At the third step, another barrier layer(132) is formed on the hydrogen barrier layer(130). An another barrier layer(132) includes an uppermost surface.
|
申请公布号 |
KR20000035034(A) |
申请公布日期 |
2000.06.26 |
申请号 |
KR19990044966 |
申请日期 |
1999.10.16 |
申请人 |
SYMETRIX CORPORATION;NEC CORPORATION |
发明人 |
KUCHIARO JOSEP D.;HURUYA YAKIRA;PAZ DE ARAUZO KALOS A.;MIYASAKA YOICHI |
分类号 |
H01L21/8247;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/105 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|