| 摘要 |
A memory device and method are provided that permits repair a predetermined normal word line by a redundant word line in an identical bank, for example, in a multi-bank device. Each bank of the memory device includes a single memory block of a plurality of memory blocks having redundant word lines. A refresh operation can be performed in each banks by simultaneously driving normal word lines and the redundant word lines when each the memory blocks are accessed with the exception of the single memory block including the redundant word lines.
|
