| 摘要 |
PROBLEM TO BE SOLVED: To secure the clearance of second-layer wiring, and to form a first- layer wiring at the minimum clearance by thickly forming the second-layer wiring where a contact is formed, and at the same time by alternately forming the contact with adjacent wiring. SOLUTION: First-layer wiring 2 is interconnected to second-layer wiring 4 being positioned at a part directly above the first-layer wiring 2 by a number of formed contacts 5. In the second-layer wiring 4, the minimum clearance in terms of a design rule is larger than that of the first layer, and distance d2 is required. Since the contact 5 is larger than the thickness of the second- layer wiring 4, a region where the contact 5 is formed is thickly formed as compared with the other regions of the second-layer wiring 4. The contacts 5 formed in adjacent wiring are alternately formed one another, and the clearance of the second-layer wiring cannot become smaller than d2, thus securing the clearance of the second-layer wiring with specific size while the clearance of the first-layer wiring is minimized, and reducing the wiring region of a semiconductor integrated circuit.
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