| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element driving method capable of reducing the dark signal of the sensor part at the time of low illuminance in a solid-state image pickup element in which length of the void layer of a sensor part is set to be long enough for absorbing near infrared rays. SOLUTION: At the time of driving a CCD image pickup element 11 in which the length of the void layer of a sensor part is set to be long enough for absorbing near infrared rays, for example, 3μm or above, the illuminance of the image pickup face of the CCD image pickup element 11 is detected by an illuminance detector 13, and a second substrate bias voltage Vsub2 higher than a first substrate bias voltage Vsub1 at the time of a normal operation is selected by a bias changeover switch 15 at the time of low illuminance, and impressed to the substrate of the CCD image pickup element 11 under the control of a bias control circuit 14 for monitoring the detected output.
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