发明名称 SEMICONDUCTOR PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To process a sample with superior stability and reproductivity by a method, wherein reaction sub-product formation in a vacuum container is prevented. SOLUTION: An inner wall 1A of a vacuum container 1, the surface of a sample stand 7', the surface of an electrode stand 18, and the surface of an electrode 13 are coated with, e.g. a TiO2 film (titanium dioxide film) as an optical catalytic film 14. Thus, a part of the surface of the sample 8 decomposed by plasma 9, which is a reaction product with a reactive gas 3, or the like eve reaches a part coated with the optical catalytic film 14, receives ultraviolet rays or vacuum ultraviolet rays 17 generated from the plasma 9, and is decomposed on a surface of the optical catalytic film 14.
申请公布号 JP2000164564(A) 申请公布日期 2000.06.16
申请号 JP19980336993 申请日期 1998.11.27
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;NTT ADVANCED TECHNOLOGY CORP 发明人 OKADA IKUO;NAKANISHI KAZUYA;OZAWA AKIRA;MIYOSHI KAZUNARI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
代理机构 代理人
主权项
地址