SEMICONDUCTOR DEVICE

摘要

In a semiconductor device, a contact stopper film (15) which applies stress is provided for covering an array (11) wherein MISFETs are arranged in a gate length direction. The stopper film has an extending portion (12) which extends outward with L=1µm or more from a gate electrode (14) of the MISFET at the furthest point of the array (11) of the MISFETs.