METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR BY HEAT TREATMENT OF DIELEDTRIC LAYER UNDER HYDROGEN AMBITENT

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to reduce the trap density between an electrode of the capacitor and a dielectric layer by heat-treating the dielectric layer in a hydrogen atmosphere. CONSTITUTION: A lower electrode is formed on a semiconductor substrate(10). A dielectric layer is formed on the lower electrode(12). Then, the dielectric layer is heat-treated in a hydrogen atmosphere(14). After that, an upper electrode is formed on the dielectric layer(18). When the dielectric layer is heat-treated in the hydrogen atmosphere, H2 gas or H2 plasma is supplied. The heat treatment process is carried out in the temperature of 300 to 600°C for 5 to 60 minutes. The lower electrode is comprised of any one selected from the group consisting of polysilicon, metal, metal silicide and metal nitride.