发明名称 |
PLASMA ETCHING OF POLYSILICON USING FLUORINATED GAS MIXTURES |
摘要 |
A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 A/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C. |
申请公布号 |
WO0033372(A1) |
申请公布日期 |
2000.06.08 |
申请号 |
WO1999US28594 |
申请日期 |
1999.12.01 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHINN, JEFFREY;SHIN, TAEHO;KIM, NAM-HUN |
分类号 |
H01L21/302;H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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