发明名称 Method of manufacturing semiconductor wafer method of using and utilizing the same
摘要 A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP1006567(A2) 申请公布日期 2000.06.07
申请号 EP19990309737 申请日期 1999.12.03
申请人 CANON KABUSHIKI KAISHA 发明人 YONEHARA, TAKAO;SHIMADA, TETSUYA;SAKAGUCHI, KIYOFUMI;WATANABE, KUNIO;OHMI, KAZUAKI
分类号 H01L27/12;H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L21/20 主分类号 H01L27/12
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