发明名称 |
Method of manufacturing semiconductor wafer method of using and utilizing the same |
摘要 |
A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE>
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申请公布号 |
EP1006567(A2) |
申请公布日期 |
2000.06.07 |
申请号 |
EP19990309737 |
申请日期 |
1999.12.03 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YONEHARA, TAKAO;SHIMADA, TETSUYA;SAKAGUCHI, KIYOFUMI;WATANABE, KUNIO;OHMI, KAZUAKI |
分类号 |
H01L27/12;H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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