Contact structure of semiconductor memory device for reducing contact related defect and contact resistance and method for forming the same

摘要

A contact structure for a semiconductor memory device that reduces contact related defects and contact resistance and a method for forming the same are provided. The semiconductor memory device having an insulation layer formed on a conductive layer includes a contact formed within an opening having a bilobate shape. The contact passes through a part of the insulation layer up to the upper surface of the conductive layer from the top of the insulation layer.