发明名称 Method of forming bonding pad
摘要 A method of forming a bonding pad is provided. A substrate is provided and a multi-metal layer is formed on the substrate. An inter-metal dielectric layer with a trench is formed on the multi-metal layer. A conformal barrier layer is formed on the inter-metal dielectric layer. A first metal layer is formed on the barrier layer to fill a part of the trench. A second metal layer is formed on the first metal layer to fill the trench. A part of the first metal layer and a part of the second metal layer flowing out the trench are removed to expose the inter-metal dielectric layer. A cap layer is formed on the inter-metal dielectric layer. A passivation layer is formed on the cap layer. A part of the passivation and a part of the cap layer are removed to form a bonding pad window by a defined masking layer.
申请公布号 US6069066(A) 申请公布日期 2000.05.30
申请号 US19980208025 申请日期 1998.12.09
申请人 UNITED MICROELECTRONICS CORP. 发明人 HUANG, YIMIN;YEW, TRI-RUNG
分类号 H01L21/60;H01L23/485;(IPC1-7):H01L21/44 主分类号 H01L21/60
代理机构 代理人
主权项
地址