发明名称 |
Method of forming bonding pad |
摘要 |
A method of forming a bonding pad is provided. A substrate is provided and a multi-metal layer is formed on the substrate. An inter-metal dielectric layer with a trench is formed on the multi-metal layer. A conformal barrier layer is formed on the inter-metal dielectric layer. A first metal layer is formed on the barrier layer to fill a part of the trench. A second metal layer is formed on the first metal layer to fill the trench. A part of the first metal layer and a part of the second metal layer flowing out the trench are removed to expose the inter-metal dielectric layer. A cap layer is formed on the inter-metal dielectric layer. A passivation layer is formed on the cap layer. A part of the passivation and a part of the cap layer are removed to form a bonding pad window by a defined masking layer.
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申请公布号 |
US6069066(A) |
申请公布日期 |
2000.05.30 |
申请号 |
US19980208025 |
申请日期 |
1998.12.09 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HUANG, YIMIN;YEW, TRI-RUNG |
分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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