| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure for semiconductor device in which observations by means of an EB taster can be performed easily. SOLUTION: A wiring structure for semiconductor device has a plurality of wiring layers 14, 16, and 18 which are respectively formed through interlayer insulating films. The wiring structure is also provided with inspection wiring pads 28 independently provided on the uppermost interlayer insulating film which is the base layer of the uppermost wiring layer 18, connecting wiring pads 32 respectively provided on the interlayer insulating films, and contacts 34 and 36 which are provided through each interlayer insulating layer and respectively connect the lower layer wiring 14 and relaying wiring pads 32 to the pads 32 and inspection wiring pads 28. In this wiring structure, the waveform of the lower wiring layer 14 can be observed by means of an electron beam inspection device through the inspection wiring pads 28. |
