| 摘要 |
PURPOSE: A multilayer ferroelectric capacitor is provided to reduce more leakage currents than one of a mono-layer ferroelectric film and to improve the microstructural porosity. CONSTITUTION: A capacitive element(10) includes a semiconductor substrate or a wafer(12), an insulator layer(14) formed on the semiconductor substrate or the wafer, a first electrode(16) formed on the insulator layer, a multilayer ferroelectric film(18), and a second electrode(20) formed on the ferroelectric material(18B). Herein, the multiplayer ferroelectric film is consisted of two different ferroelectric materials formed on the first electrode and the mixture of one and more ferroelectric materials(18A,18B). The insulator layer is properly made up of silicon oxides while the first and the second electrodes are constituted of the same conductive materials.
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