发明名称 |
Semiconductor assembly, especially with microwave chips e.g. for a mobile telephone, has a thin heat radiating substrate formed by diffusion metallization of molten copper into a molybdenum pressing |
摘要 |
Semiconductor assembly, has a thin heat radiating substrate formed by diffusion metallization of molten copper into a molybdenum pressing. A semiconductor assembly, with mounted chips, has a less than 0.4 mm thick heat radiating substrate of a copper - molybdenum (Cu-Mo) composite material formed by diffusion metallization of 30-40 wt.% copper in molten form into a molybdenum pressing. Independent claims are also included for the following: (i) an isostatic pressing process for producing a pressing for forming a composite material for the above semiconductor assembly; and (ii) a process for producing a heat radiating substrate for the above semiconductor assembly. |
申请公布号 |
DE19906875(A1) |
申请公布日期 |
2000.05.18 |
申请号 |
DE1999106875 |
申请日期 |
1999.02.18 |
申请人 |
TOKYO TUNGSTEN CO., LTD. |
发明人 |
HIRAYAMA, NORIO;OSADA, MITSUO;AMANO, YOSHINARI;MAESATO, HIDETOSHI;SAKIMAE, KENJI;ICHIDA, AKIRA;ASAI, KIYOSHI;ARIKAWA, TADASHI |
分类号 |
B21B3/00;B22F3/02;B22F3/04;B22F3/26;C04B37/02;H01L21/48;H01L23/02;H01L23/06;H01L23/08;H01L23/373;(IPC1-7):H01L23/14;B32B31/06 |
主分类号 |
B21B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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