发明名称 Semiconductor assembly, especially with microwave chips e.g. for a mobile telephone, has a thin heat radiating substrate formed by diffusion metallization of molten copper into a molybdenum pressing
摘要 Semiconductor assembly, has a thin heat radiating substrate formed by diffusion metallization of molten copper into a molybdenum pressing. A semiconductor assembly, with mounted chips, has a less than 0.4 mm thick heat radiating substrate of a copper - molybdenum (Cu-Mo) composite material formed by diffusion metallization of 30-40 wt.% copper in molten form into a molybdenum pressing. Independent claims are also included for the following: (i) an isostatic pressing process for producing a pressing for forming a composite material for the above semiconductor assembly; and (ii) a process for producing a heat radiating substrate for the above semiconductor assembly.
申请公布号 DE19906875(A1) 申请公布日期 2000.05.18
申请号 DE1999106875 申请日期 1999.02.18
申请人 TOKYO TUNGSTEN CO., LTD. 发明人 HIRAYAMA, NORIO;OSADA, MITSUO;AMANO, YOSHINARI;MAESATO, HIDETOSHI;SAKIMAE, KENJI;ICHIDA, AKIRA;ASAI, KIYOSHI;ARIKAWA, TADASHI
分类号 B21B3/00;B22F3/02;B22F3/04;B22F3/26;C04B37/02;H01L21/48;H01L23/02;H01L23/06;H01L23/08;H01L23/373;(IPC1-7):H01L23/14;B32B31/06 主分类号 B21B3/00
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